화학공학소재연구정보센터
Applied Surface Science, Vol.244, No.1-4, 369-372, 2005
Sb excimer-laser doping in ZnO films prepared by oxidation of sulfide on Si
ZnO thin films were formed by oxidation of ZnS films on Si substrates. Sb doping of ZnO films was tried by laser irradiation of ZnO deposited with Sb. Although p-type ZnO:Sb film was not obtained, it was observed that the laser irradiation increased the near-ultraviolet (NUV) emission intensity, whereas the visible emission of oxygen vacancies decreased. Moreover, the resistance of the laser-irradiated ZnO:Sb films was higher than that of films without irradiation. These results show that Sb compensates the oxygen vacancy; as a result, the electrons are neutralized by holes generated by the dopant (Sb). (c) 2004 Published by Elsevier B.V.