화학공학소재연구정보센터
Applied Surface Science, Vol.237, No.1-4, 134-138, 2004
Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 degrees C
The oxidation of a 2.7-nm-thick layer of Si formed on a layer of Si0.7MGe0.3 using atomic oxygen at 400 degreesC was studied with the aid of angle-Tesolved X-ray photoelectron spectroscopy and high-resolution Rutherford backscattering spectroscopy. Analysis of the measurement results revealed that: (1) an appreciable number of Ge atoms diffused into the Si layer during the formation of a 3-nm-thick Si layer on the Si0.7Ge0.3 layer at 720 degreesC; (2) when the entire Si layer was oxidized, 1.8% of the Si layer remained in the SiO2 in the form of Si0.7Ge0.3 alloy; and (3) an abrupt compositional transition took place at the SiO2/SiGe interface. (C) 2004 Elsevier B.V. All rights reserved.