화학공학소재연구정보센터
Applied Surface Science, Vol.224, No.1-4, 283-287, 2004
Minority carrier lifetime and diffusion length in Si1-x-yGexCy and Si1-yCy heterolayers
The minority carrier lifetime and diffusion length in partially strain-compensated Si1-x-yGexCy ternary alloys or tensilely strained Si1-yCy layers have been measured by using capacitance-time (C-t) transient technique. The substrate doping (N-B) of molecular beam epitaxy (MBE) grown Si0.835Ge0.15C0.015 films and solid phase epitaxial Si0.99C0.01 films was found to be approximately 1 x 10(17) cm(-3) which has been extracted from high frequency capacitance-voltage (C-HF-V-G) characteristics of MIS capacitors fabricated using SiO2 and ZrO2 films on Si0.99C0.01 and Si0.835Ge0.15C0.015, respectively. Minority carrier lifetimes of Si-0.83 Ge0.15C0.015 and Si0.99C0.01 films are found to be 2.4 x 10(-6) and 9.2 x 10(-9) s, respectively. The average values of the diffusion length were found to be 27 and 3 mum for Si0.835Ge0.15C0.015 and Si0.99C0.01 films, respectively. (C) 2003 Elsevier B.V. All rights reserved.