화학공학소재연구정보센터
Applied Surface Science, Vol.216, No.1-4, 537-541, 2003
AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)(3))
ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp)(3)). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP. (C) 2003 Elsevier Science B.V. All rights reserved.