화학공학소재연구정보센터
Applied Surface Science, Vol.190, No.1-4, 247-251, 2002
Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells
The excitonic properties of a ZnSe/ZnSxSe1-x strained quantum well (QW) are calculated taking into account interface effects. Numerical results obtained with ZnS0.18Se0.82/ZnSe QWs show that graded interfaces can be responsible for a strong broadening of excitonic spectra. (C) 2002 Elsevier Science B.V. All rights reserved.