화학공학소재연구정보센터
Applied Surface Science, Vol.190, No.1-4, 212-217, 2002
Size-shrinkage effect of InAs quantum dots during a GaAs capping growth
The modification of the InAs quantum dots (QDs) by the GaAs capping growth was studied by using cross-sectional STEM and atomic force microscopy. In case of the GaAs capping growth at 450 degreesC, it was found that the lateral size of the InAs QDs significantly decreases rather than the height and that this size-shrinkage effect is enhanced for the large QDs. The shrinkage behavior is mainly attributed to the indium surface segregation, strongly depending on the surface strain of the QDs. The growth process of the GaAs capping layer plays an important role for achieving the size ordering of the embedded QDs. (C) 2002 Elsevier Science B.V. Ail rights reserved.