화학공학소재연구정보센터
Applied Surface Science, Vol.190, No.1-4, 191-194, 2002
Interface-related effects on confined excitons in GaAs/AlxGa1-xAs single quantum wells
Confined excitons in non-abrupt GaAs/AI(x)Ga(1-x)As single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning alpha with respect to the abrupt interface picture. Numerical results for confined (0, 0), (1 1) and (0, 2) excitons in GaAs/Al0.3Ga0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Angstrom and 2 ML wide interfaces. (C) 2002 Elsevier Science B.V. All rights reserved.