화학공학소재연구정보센터
Applied Surface Science, Vol.185, No.1-2, 92-98, 2001
Spatial alignment evolution of self-assembled In0.4Ga0.6As island arrays grown on GaAs (311)B surface by atomic hydrogen-assisted molecular beam epitaxy
Self-assembled In0.4Ga0.6As island arrays have been grown on (311)B GaAs substrates by using atomic hydrogen-assisted molecular beam epitaxy (H-MBE). The evolution process of surface morphology with deposition has been analyzed by atomic force microscopy (AFM) and the development of lateral ordering has been highlighted by two-dimensional fast Fourier transformation (2DFFT) analysis of the AFM images. It is revealed that the InGaAs islands are arranged in nearly perfect two-dimensional (2D) square-like lattice with two sides parallel to [01 - 1] and [- 2 3 3] azimuths. Such an alignment of islands is coincident with the anisotropy of bulk elastic modulus of the GaAs (3 1 1)B substrate.