화학공학소재연구정보센터
Applied Surface Science, Vol.184, No.1-4, 425-430, 2001
High quality SiC applications in radiation dosimetry
The current response of SiC on-line dosimeters to gamma -radiation from a Co-60 source is presented. The devices used are 4H-SiC epitaxial n-type layer deposited onto a 4H-SiC n(+)-type substrate wafer doped with nitrogen. Single-pad Schottky contacts have been produced by deposition of a 1000 Angstrom gold film on the epitaxial layer using a lift-off technology and ohmic contacts have been deposited on the rear substrate side. The detector has been then embedded in epoxy resin and exposed to the Co-60 source in the dose range 0.1-1 Gy. A signal response comparable to that of silicon standard dosimeters has been measured with the unbiased SiC device. The released charge has been observed to increase linearly with the dose and dose-rate.