화학공학소재연구정보센터
Applied Surface Science, Vol.184, No.1-4, 161-166, 2001
Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films
We have characterized SiO2/SiC interfaces by X-ray photoelectron spectroscopy in terms of composition and bonds to clarify the reasons for the problems in silicon carbide metal-oxide-semiconductor field-effect-transistor and MOS structures. The oxide films on 6H-SiC were shaped into slopes by HF chemical etching to obtain the depth profile of the composition and the bondings. An interface layer was found near the SiO2/SiC boundary, where SiO2 stoichiometry is collapsed and there exists the bondings other than Si-O-2 and Si-C. Also, we revealed the differences in the interface properties for different oxidation processes.