화학공학소재연구정보센터
Applied Surface Science, Vol.175, 495-498, 2001
Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane
Cubic-silicon carbide (3C-SiC) epitaxial films were grown on Si substrates by the triode plasma chemical vapor deposition (CVD) method using monomethylsilane (MMS) diluted with hydrogen as a source gas. Under negative grid bias condition, the single crystal films with high quality were grown at temperatures higher than 900 degreesC. The growth rate by triode plasma CVD appreciably increased at temperatures lower than 1100 degreesC, compared to that grown by low-pressure thermal CVD (LPCVD). Activation energy of the growth rate decreased about 30 kcal mol(-1) by using the triode plasma CVD method.