Applied Surface Science, Vol.168, No.1-4, 335-339, 2000
F-2 laser etching of GaN
F-2 laser-induced direct etching of GaN has been demonstrated. Well resolved geometric structure is found on edge of etched area. No acceleration of ablation rate at higher laser intensity was confirmed, while the rate acceleration is obvious in case of KrF excimer laser irradiation. The ablation is thought to proceed with direct photoionization initiated by single 7.9 eV photon absorption.