화학공학소재연구정보센터
Applied Surface Science, Vol.167, No.1-2, 122-124, 2000
Chemical passivation of Si(111) capped by a thin GaSe layer
An ultrathin layer of GaSe was grown on a hydrogen-terminated Si(lll) substrate by molecular beam epitaxy. Substrate and epilayer were investigated by photoemission (XPS and UPS) and electron diffraction (LEED) immediately after sample preparation and after storage of 30 days in air. The tendency to surface oxidation is strongly reduced for the GaSe-covered sample compared to a hydrogen-terminated sample.