화학공학소재연구정보센터
Applied Surface Science, Vol.166, No.1-4, 77-81, 2000
Optical properties of as grown and ion implanted (Ar+,N-2(+),alpha) GaAs nipi doping superlattices
A brief review of the optical properties of GaAs nipi doping superlattices (DSLs) subjected to N-2(+), Ar+ ions, and alpha particle bombardment is given. Several experimental techniques, such as low temperature CW and time resolved photoluminescence (CW and TR-LTPL) as well as Raman spectroscopy (RS) and spectroscopic ellipsometry (SE) have been used to detect new optically active bands. An attempt is made to explain the origin of these new bands.