화학공학소재연구정보센터
Applied Surface Science, Vol.165, No.2-3, 135-140, 2000
Surface morphology and removal rates for dry- and wet-etched novel resonator materials - Part II. La3Ga5.5Nb0.5O14
The wet and dry etching behavior of La3Ga5.5Nb0.5O14 is reported. The ultimate application for this material is as crystal resonators whose operating frequency is inversely proportional to sample thickness. Reaction-limited wet etching in HCl or HF at greater than or equal to 25 degrees C, or HNO3 at greater than or equal to 60 degrees C produced removal rates up to 9500 Angstrom . min(-1) (HCl at 65 degrees C), with surface root-mean-square (RMS) roughnesses about a factor of two higher than on an unetched control sample. Dry etching in Cl-2-based plasmas produced removal rates up to 950 Angstrom . min(-1), with surfaces RMS values also about a factor of two higher than on control samples. Significant surface roughening occurred during dry etching when higher ion fluxes were used.