화학공학소재연구정보센터
Applied Surface Science, Vol.161, No.3-4, 328-332, 2000
Observation of an enhanced N 1s shake-up satellite on nitrided Si(100) and correlation with N bonding geometry
Si(100) dosed with NO and thermally nitrided with ammonia was investigated by X-ray photoelectron spectroscopy (XPS) and high-resolution electron energy loss spectroscopy (HREELS) fura wide range of temperatures. A 410-eV peak was observed in the N Is XPS spectrum region. It is proposed to be an enhanced shake-up satellite of the N Is photoelectrons. The temperature dependence of both this peak and HREELS data suggests that precursor silicon nitrides such as planar and pyramidal Si3N species as well as Si3N4 can form at different temperatures.