화학공학소재연구정보센터
Applied Surface Science, Vol.159, 427-431, 2000
In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN
Atomic layer epitaxy (ALE) of cubic-GaN on GaAs(001) substrates is tried by alternate supply of GaCl and NH3, and the growth process is monitored in situ using gravimetric monitoring (GM) method. It is found that one monolayer (ML)/cycle growth of a pure cubic-GaN is possible when the growth is performed at 400 degrees C on 25-nm-thick GaN buffer layer/GaAs(001) substrate. On the other hand, three-dimensional (3D) growth occurs when the growth is performed directly on GaAs substrate, and crystallinity of the grown layer is amorphous.