화학공학소재연구정보센터
Applied Surface Science, Vol.159, 225-230, 2000
In situ UHV-TEM observation of the direct formation of Pd2Si islands on Si(111) surfaces at high temperature
Pd was deposited on clean Si surfaces at about 680 K in an ultrahigh-vacuum transmission electron microscope. The direct formation process of Pd,Si islands on Si(lll) surfaces was observed in situ by high-resolution transmission electron microscopy in a cross-sectional view, At a low deposition amount, Si(111) 7 x 7 surfaces were transformed to a new layer due to the coverage by Pd. With further deposition, Pd,Si islands appeared on Si surfaces. Some Pd,Si islands were single crystals and grew epitaxially on Si(lll) surfaces in the Stranski-Krastanow mode. After stopping Pd deposition, the surface of the Pd,Si islands exhibited a reconstruction structure with threefold periodicity, which consists of two atomic layers.