Journal of Crystal Growth, Vol.293, No.2, 330-334, 2006
Effect of growth temperature on InAs wetting layer grown on (113)A GaAs by molecular beam epitaxy
Reflexion high-energy electron diffraction (RHEED) and energetic balance between surface and elastic strain energies, based on continuum elastic theory, were used to investigate the dependences of the formation process and the strain on the growth temperature of InAs quantum dots (QDs). This latest was grown on (113)A GaAs substrates by using molecular beam epitaxy (MBE). The thickness of the InAs wetting layer, which preceded the formation of the InAs QDs, was significantly affected by the substrate temperatures. The magnitude of the strain of the InAs QDs, which formed at a low substrate temperature, increases when the temperature drops. (c) 2006 Elsevier B.V. All rights reserved.