화학공학소재연구정보센터
Journal of Crystal Growth, Vol.227, 766-769, 2001
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
The effects of annealing time and Si cap layer thickness: on the thermal stability of the Si/SiGe/Si heterostructures deposited by disilane and solid-Ge molecule beam epitaxy were investigated. It is found that in the same strain state of the SiGe layers the annealing time decreases with increasing Si cap layer thickness. This effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the Si cap layer thickness.