Journal of Materials Science, Vol.41, No.13, 4117-4121, 2006
Crystalline carbon nitride films prepared by microwave plasma chemical vapour deposition
Crystalline carbon nitride films have been synthesized on Si (100) substrates by a microwave plasma chemical vapour deposition technique, using mixture of N-2, CH4 and H-2 as precursor. Scanning electron microscopy shows that the films consisted of hexagonal bars, tetragonal bars, rhombohedral bars, in which the bigger bar is about 20 mu m long and 6 pm wide. The X-ray photoelectron spectroscopy suggests that nitrogen and carbon in the films are bonded through hybridized sp(2) and sp(3) configurations. The x-ray diffraction pattern indicates that the films are composed of alpha-, ss-, pseuclocubic and cubic C3N4 phase and an unidentified phase. Raman spectra also support the existence of sigma- and ss-C3N4 phases. Vickers microhardness of about 41.9 GPa measured for the films. (c) 2006 Springer Science + Business Media, Inc.