화학공학소재연구정보센터
Applied Chemistry, Vol.10, No.1, 224-227, May, 2006
Radio Frequency Reactive Magnetron Sputtering 방법으로 증착된 ITO 박막에 대한 산소 농도의 영향
Influence of O2 Concentration on Indium Tin Oxide Thin Films Deposited by Radio Frequency Reactive Magnetron Sputtering Method
The indium tin oxide (ITO) thin films were deposited on glass substrate by radio frequency reactive magnetron sputtering method. As the O2 concentration increased, the deposition rate of ITO thin films decreased and the resistivity increased. The films deposited at 2% O2 displayed the highest transmittance. The observation of the ITO thin films by atomic force microscopy indicated that the microstructure and surface morphology of the films were responsible for the transmittance.