Applied Chemistry, Vol.10, No.1, 61-64, May, 2006
POSS를 포함하는 화학증폭형 레지스트
POSS-containing Chemically Amplified Resists
Nanocomposite materials based on poly(p-hydroxystyrene-co-2-methyl-2adamantyl methacrylate-co-methacrylisobutyl-POSS) were synthesized and evaluated as EUV chemically amplified resists. Incorporation of POSS groups into the matrix polymer made it possible to improve the dry-etch resistance, and excellent lithographic performance was obtained. The well-defined 100 nm elbow patterns were obtained using an EUV lithography tool. The dry-etch resistance of this resist for a CF4-based plasma was 1.1 times higher than that of poly(p-hydroxystyrene).