Industrial & Engineering Chemistry Research, Vol.43, No.12, 2946-2949, 2004
Synthesis and evaluation of pure-silica-zeolite BEA as low dielectric constant material for microprocessors
Pure-silica-zeolite (PSZ) BEA film was prepared on stainless steel substrates by in situ crystallization at 130 degreesC for 14 days using a gel composition of 0.6:0.6:1:9.8 (TEA)OH-HF-SiO2-H2O. The film is polycrystalline, continuous, and about 15 mum thick. The film was characterized by X-ray diffraction (XRD), thermogravimetric analysis (TGA), inductively coupled plasma-atomic emission spectrometry (ICP-AES), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM). The as-synthesized film was also measured for the first time for dielectric constant (k), and a k value of 2.3 was obtained.