화학공학소재연구정보센터
Applied Chemistry, Vol.7, No.2, 723-726, October, 2003
저온 플라스마 공정을 이용한 광촉매 박막 제조
Preparation of Photocatalytic Thin Film by Low Temperature Plasma Process
TiO2 thin films were deposited onto glass plates by PECVD for the preparation of photocatalytic thin film. TTIP was used as a precursor and mixed with oxygen and argon. Effects of deposition temperature, discharge power, deposition pressure and O2/Ar gas flow ratio on the structure of the film and the photocatalytic performance were investigated. The TiO2 films showed the structural change from amorphous state to anatase crystalline state at 400 ℃. A film prepared at 400 ℃, 10 W, gas flow ratio of 20 sccm/100 sccm, and 2.1 x 10-1torr showed the best photocatalytic performance, which was evaluated based on the degradation efficiency of methylene blue under UV-A light. The photocatalytic performance depended more on the deposition temperature than the discharge power.