화학공학소재연구정보센터
Thin Solid Films, Vol.425, No.1-2, 260-264, 2003
Fabrication of vanadium oxide thin film with high-temperature coefficient of resistance using V2O5/V/V2O5 multi-layers for uncooled microbolometers
Vanadium oxide thin film is a promising material for uncooled microbolometers due to its high temperature coefficient of resistance (TCR) at room temperature.It is, however, very difficult to deposit vanadium oxide thin films having a high temperature coefficient of resistance and low resistance because of the process limits in microbolometer fabrication.W e present a novel fabrication method for vanadium oxide thin films having good electrical properties.Through the formation of a sandwich structure of V2O5 (100 Å)/V (~80 Å)/V2O5 (500 Å) by a conventional sputter method and post-annealing at 300 ℃ in oxygen, a mixed phase of VOx is formed.The results show that the mixed phase formed by this process has a high TCR of more than -2%/℃ and low resistivity of <-0.1 Ω cm at room temperature.