화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.20, No.3, 1192-1195, 2002
Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy
Trench-type narrow InGaAs quantum wires (QWRs) with a cross-sectional depth of 8 nm and a width of 25 nm have been successfully fabricated by hydrogen-assisted molecular beam epitaxy. Optical properties of the QWRs are improved by atomic-hydrogen irradiation as observed by photoluminescence measurement. The trench-type QWR-FET has a pronounced negative differential conductance with a low onset voltage and a high peak-to-valley current ratio. We also study the quantum-interference characteristics of the trench-type QWR-FET, and find very different behavior to that typically exhibited by disordered wires. This Aharonov-Bohm effect points to an interference process in which the one-dimensional subbands of the wire themselves constitute well-resolved paths for electron interference.