화학공학소재연구정보센터
Korean Journal of Chemical Engineering, Vol.19, No.5, 903-907, September, 2002
Preparation of Nano-Sized Silicon Carbide Powder Using Thermal Plasma
E-mail:
Nano-sized silicon carbide (SiC) powder was prepared by thermal plasma process using silicon tetrachloride (SiCl4) and methane (CH4). The synthesized powder was characterized by X-ray diffraction pattern, scanning electron microscopy, transmission electron microscopy, FT-IR spectroscopy and particle size analyzer. The powder was dominated by β-SiC including some of α-SiC and free carbon species. The quality of the powder was varied with process conditions such as the molar ratio of H/Si and C/Si, and collecting positions. It was known that the conversion to SiC was mainly affected by the addition of hydrogen gas because it promoted the decomposition and reduction of SiCl4. CH4 was easily decomposed to carbon species for the formation of SiC as well as removal of impure oxygen, but excessive carbon suppressed the formation of crystalline SiC and resulted in the solid carbon contamination. The optimum ratio of H/Si was approx. 26 and that of C/Si was 1.1. For collecting positions, the powder collected at the vessel and filter was preferable to that at the reaction tube. The average size of the powder synthesized was estimated to be below 100 nm and uniform in distribution.
  1. Bolous MI, Fauchais P, Pfender E, "Thermal Plasmas-Fundamental and Applications," Plenum Press, New York (1994)
  2. Chemsage Program, Version 3.2, GTT-Technologies, Germany (1996)
  3. Chen L, Goto T, Hirai T, J. Mater. Sci., 24, 3824 (1989) 
  4. Chen CY, Lin CI, Chen SH, Br. Ceram. Trans., 99(2), 57 (2000) 
  5. Guo JY, Gitzhofer F, Boulos MI, Plasma Chem. Plasma Process., 17(2), 219 (1997)
  6. Hollabaugh CM, Hull DE, Newkirk LR, Petrovic JJ, J. Mater. Sci., 18, 3190 (1983) 
  7. Kameyama T, Sakanaka K, Motoe A, Tsunoda T, Nakanaga T, Wakayama NI, Takeo H, Fukuda K, J. Mater. Sci., 25, 1058 (1990)
  8. Koc R, Glatzmaier G, Sibold J, J. Mater. Sci., 36(4), 995 (2001) 
  9. Oh SM, Park DW, Korean J. Chem. Eng., 17(3), 299 (2000)
  10. Oh SM, Park DW, Thin Solid Films, 386(2), 233 (2001) 
  11. Park HS, Rhee SW, HWAHAK KONGHAK, 28(4), 451 (1990)
  12. Park HS, Seon HS, Rhee SW, Lee KH, Baik SG, J. Mater. Sci., 26, 5957 (1991) 
  13. Pfender E, Plasma Chem. Plasma Process., 19(1), 1 (1999) 
  14. Pickles CA, Toguri JM, Sirnpson CJ, Br. Ceram. Trans., 94(3), 89 (1995)
  15. Zhu CW, Zhao GY, Revankar V, Hlavacek V, J. Mater. Sci., 28, 659 (1993)