화학공학소재연구정보센터
Thin Solid Films, Vol.395, No.1-2, 275-279, 2001
A Cat-CVD Si3N4 film study and its application to the ULSI process
The feasibility of Si3N4 films prepared by a catalytic chemical vapor deposition (Cat-CVD) method is studied with the idea of considering its applications to the ULSI process. In this study, SW, films are prepared by Cat-CVD at various catalyzer temperatures, gas pressures and substrate temperatures. It was verified that the content of metal contamination is much lower than that permitted in a ULSI manufacture line. The maximum deposition rate reaches up to 132 nm/min, which is sufficiently higher than the deposition rate required for sidewall films near gate electrodes. The leakage current for SiNx films is lower than that for plasma enhanced CVD (PECVD) SiNx films. These features show that Cat-CVD SiNx films have the potential to be employed in the ULSI process.