화학공학소재연구정보센터
Thin Solid Films, Vol.373, No.1-2, 180-183, 2000
Dependency of reactive magnetron-sputtered SiC film quality on the deposition parameters
SiC thin films have been prepared by using RF reactive magnetron sputtering (RF-RMS). The deposition parameters have been varied over a wide range to optimize the quality of the films; substrate temperature from 700 to 1000 degreesC, Ar/CH4 composition from 80:20 to 50:50 and RF power from 100 to 200 W. The samples have been characterized by X-ray diffraction, Rutherford backscattering, profilometry, FTIR spectroscopy and ellipsometry. The results show that good quality silicon carbide films can be prepared by using the RF-RMS technique.