화학공학소재연구정보센터
Solar Energy Materials and Solar Cells, Vol.67, No.1-4, 247-253, 2001
Role of incorporated sulfur into the surface of Cu(InGa)Se-2 thin-film absorber
High-performance Cu(InGa)Se-2 (CIGS) thin-film absorbers with an intentionally graded band-gap structure have been fabricated by a simple two-stage method using In/Cu-Ga/Mo stacked precursors and H2Se gas. Additional sulfurization step to form a thin Cu(InGa)(SeS)(2) (CIGSS) surface layer on the absorber is necesarry to improve the device performance. In order to understand the role of S incorporated into CIGS absorber, approaches with S are discussed. One approach is carried out by changing the condition of our absorber formation process. It is verified to be possible to incorporate more S into the CIGS absorber, but difficult to improve the device performance with higher S contained CIGS absorbers because of decrease in FF. The incorporated S is concluded to be effective to improve the pn heterojunction quality due to the passivation of surface and grain boundary of CIGS absorber through the formation of a thin CIGSS surface layer. (C) 2001 Elsevier Science B.V. All rights reserved.