화학공학소재연구정보센터
Materials Science Forum, Vol.338-3, 1627-1630, 2000
GaNPIN photodiodes grown on sapphire and SiC substrates
GaN PIN photodiodes were grown on both sapphire and SIC substrates to directly compare the device performance. In this paper the growth, fabrication, and characterization of these devices are described. The GaN photodiodes on sapphire have significantly higher dark current densities than similar devices grown on SiC. This reduction in dark current is attributed to a reduction in dislocation density for GaN grown on SiC as compared to sapphire. Characteristics of AlGaN PIN photodiodes grown on sapphire are also described.