화학공학소재연구정보센터
Materials Science Forum, Vol.338-3, 1553-1556, 2000
Correlation between optical and structural properties of thick GaN films grown by direct reaction of Ga and NH3
Thick GaN films were grown on sapphire by the direct reaction of metallic Ga and ammonia in a conventional RF induction heated chemical vapor deposition reactor. The crystal and optical qualities of the thick GaN was evaluated as functions of the distance between sapphire substrate and Ga source, growth temperature and time with X-ray diffraction (XRD) and photoluminescence (PL) measurements. For thick GaN grown at the position of 3.5 cm away from the Ga source, the FWHM of (0002) peak in XRD curve was about 684 arcsec, which is comparable to the previously reported values. The growth rate of the thick GaN film was about 18 mum/h. Deep level yellow luminescence had a close relation to (1010) and (1011) planes developed in the growth of GaN.