화학공학소재연구정보센터
Materials Science Forum, Vol.338-3, 1327-1330, 2000
Dynamic avalanche and trapped charge in 4H-SiC diodes
A dynamically reduced breakdown voltage from more than 2 kV under static conditions to 300 V during reverse recovery was measured for 4H-SiC p(+)nn(+) diodes. Device simulation indicates that deep hole-trapping donors in the n-base, close the pn junction, could explain the dynamically reduced breakdown voltage. Hole traps situated 0.66 eV above the valence band were found in the diode n-base by DLTS measurements.