화학공학소재연구정보센터
Materials Science Forum, Vol.338-3, 837-840, 2000
Polishing and surface characterization of SiC substrates
We have developed a chemi-mechanical surface preparation process for SiC which produces surface roughness values (Ra) below 5 Angstrom and peak-to-valley variations (PV) below 55 Angstrom. Non-contact surface profilometry, Atomic Force Microscopy, KOH etching, and Photon Back Scattering techniques have been compared for evaluation of surface finish quality. A short, low temperature KOH etch has been found to be a quick, effective method for revealing the degree of subsurface damage which does not directly correlate with surface roughness.