화학공학소재연구정보센터
Materials Science Forum, Vol.338-3, 485-488, 2000
Polytype and defect control of two inch diameter bulk SiC
By cross sectional observation of 6H-SiC basal: plain, we found two kinds of planar defects. One looks like a triangular, another looks like thin rectangular with long edge parallel to interface. These defects are related to edge dislocations. Micropipes induce the planar defects and the screw dislocations change into edge dislocation. Consequently, micropipe disappears or becomes smalt. In the high N-doped layer, a mixed polytype layer (6H, 4H and 15R) was observed.