화학공학소재연구정보센터
Materials Science Forum, Vol.338-3, 395-398, 2000
Initial oxidation of the Si-terminated 6H-SiC(0001) 3x3 surface
The initial oxidation of the Si-terminated 6H-SiC(0001)3x3 reconstructed surface is studied by core level photoemission spectroscopy using synchrotron radiation. Even at low temperatures (500 degreesC), the direct oxidation of the 6H-SiC(0001)3x3 surface leads to SiO2 formation with a non abrupt interface including significant amounts of intermediate (Si3+, Si2+, Si+) and mixed (Si-O-C) oxidation products. In contrast, thermal oxidation using same conditions of a pre-deposited Si overlayer leads to C-free and abrupt SiO2/6H-SiC(0001) interface formation.