화학공학소재연구정보센터
Materials Science Forum, Vol.338-3, 273-276, 2000
Growth and characterization of N-doped SiC films from trimethylsilane
Nitrogen-doped 3C-SiC films grown by chemical vapor deposition on Si (111) substrates using trimethylsilane (SiC3H9) have been investigated. The structure of the SiC films is studied by X-Ray diffraction, reflection-mode FTIR. The surface and interface of the grown films were examined by SEM. The effects of N-2 flow rate on the electrical properties of the 3C-SiC films were investigated by Hall effect measurement over a range of temperatures. The highest electron mobility measured at 300 K is 104 cm(2)/V.s with a corresponding carrier concentration of 2x10(17) cm(-3). The electron carrier concentration in trimethylsilane grown SiC films can be readily controlled by the flow rate of N-2.