화학공학소재연구정보센터
Materials Science Forum, Vol.338-3, 87-90, 2000
Study of nitrogen incorporation in 6H-SiC single crystals grown by PVT
The incorporation of nitrogen during single crystal growth of silicon carbide via the vapour phase has been studied in the concentration range of 3(.)10(17) cm(-3) less than or equal to c(N) less than or equal to 3(.)10(19) cm(-3). The nitrogen concentration was measured by secondary ion mass spectrometry (SIMS) and the net doping concentration by capacitance-voltage measurements (CV). In general with increasing the ratio N-2/(N-2+Ar) the nitrogen concentration in the crystals also increases resulting in a function of the square root of nitrogen partial pressure. Furthermore the influence of the seed orientation on the nitrogen level was investigated.