화학공학소재연구정보센터
Thin Solid Films, Vol.342, No.1-2, 1-3, 1999
On the properties of CuxC1-xTe: a novel semiconductor alloy
An investigation of the structural properties of a novel metal-semiconductor alloy based on CdTe and Cu is presented. The samples were prepared as thin films by radio frequency sputtering. On the basis of chemical analyses carried out by Auger spectroscopy and energy dispersive X-ray analysis, it was concluded that a new semiconducting alloy has been created: CuxCd1-xTe. X-ray diffraction and Raman scattering experiments showed that the incorporation of Cu into the CdTe lattice did not produce significant structural changes The best crystalline properties were found for samples when x less than or equal to 0.02. The Raman scattering spectra showed up to the third-order longitudinal optic mode, which is indicative of high-quality crystalline proper-ties. The alloy band gap was slightly reduced with respect to pure CdTe being, at most. 50 meV lower.