Thin Solid Films, Vol.249, No.2, 163-167, 1994
Research on YSZ Thin-Films Prepared by Plasma-CVD Process
YSZ (Y2O3-stabilized ZrO2) films were successfully prepared on a variety of substrates at a low temperature ( < 500 degrees C) by microwave plasma metallorganic chemical vapour deposition (MW-P-MOCVD) with beta-diketone chelates as volatile sources. The layers consist of nanoscale crystallite and the typical deposition rate is 3-6 mu m h(-1). At about 280 degrees C the film interface relaxed, and at 510 degrees C the associated oxygen vacancies were activated. The film grew in a columnar manner. The growth behaviour and phases of the deposits are discussed by proposing a model for the deposition process based on the experimental evidence.