화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.15, No.3, 736-740, 1997
SiC X-Ray-Lithography Mask Fabricated by Electron-Cyclotron-Resonance Plasma Source Coupled with Divided Microwaves
A newly developed electron cyclotron resonance plasma source coupled with divided microwaves was investigated for depositing SIC films as an x-ray mask membrane. Silicon carbide (SiC) films were deposited with high reliability and high repeatability using this source. The stress in SiC films has easily been controlled for a self-supported mask membrane by the addition of heat treatment. The SiC membrane has a very smooth surface (less than 1 nm of R-rms), and high stability against the x-ray irradiation, which enables highly accurate fine pattern replication with x-ray lithography.