화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.13, No.4, 1582-1584, 1995
Electrical Characterization of Single Barrier GaAs/GaN/GaAs Heterostructures
A modified molecular beam epitaxy technique has been used to grow single barrier GaAs/GaN/GaAs heterostructures of both n- and p-type. The temperature-dependent I(V) measurements show thermally activated conduction over the barrier above about 200 K. A Type I band alignment is indicated by significant offsets in both the conduction and valence bands at the GaAs/GaN heterointerface.