International Journal of Energy Research, Vol.45, No.4, 5806-5814, 2021
Improved Al2O3/SiNx and SiO2/SiNx stack passivation layer structure PERC sc-silicon solar cells on mass production line
In this study, we have successfully developed an industrially feasible stack rear Al2O3/SiNx and front SiO2/SiNx passivation layer PERC solar cells fabrication method based on the existing PERC sc-silicon solar cells production line. The manufacturing parameters of the deposition processes were adapted to get the best passivation effect. The front SiO2/SiNx passivation layer deposition parameters were researched for the best front passivation effect. The fabrication parameters of the first high refractive index SiNx layer were improved. And a new thin low refractive index SiNx capping layer at SiO2/SiNx interface was introduced. Meanwhile, the stack rear Al2O3/SiNx layer structure with double SiNx layers was also researched, which exhibited good passivation results for the rich hydrogen content in high refractive index SiNx layer. The industrial stack passivation layers PERCs with new thin low refractive index SiNx capping layer possess good performances with an efficiency of 22.15%.