Effect of Sintering Temperature on Dielectric Properties of 72 wt%(Al2O3):28 wt%(SiO2) Ceramics

Manisha Sahu; Basanta Kumar Panigrahi; Hoe Joon Kim; PL Deepti; Sugato Hajra; Kalyani Mohanta

Korean Journal of Materials Research, Vol.30, No.10, 495-501, October, 2020

DOI10.3740/MRSK.2020.30.10.495 Export Citation

Effect of Sintering Temperature on Dielectric Properties of 72 wt%(Al2O3):28 wt%(SiO2) Ceramics

Manisha Sahu^†, Basanta Kumar Panigrahi¹, Hoe Joon Kim², PL Deepti³, Sugato Hajra, and Kalyani Mohanta⁴

Department of Electronics and Instrumentation, Siksha O Anusandhan (Deemed to be University), Bhubaneswar-751030, India
¹Department of Electrical Engineering, Siksha O Anusandhan (Deemed to be University), Bhubaneswar-751030, India
²Department of Robotics Engineering, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu 42988, Republic of Korea
³Department of Physics, Veer Surendra Sai University of Technology, Burla-768018, India
⁴Department of Ceramic Engineering, Indian Institute of Technology-Banaras Hindu University, Varanasi, Uttar Pradesh 221005, India

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The various sintered samples comprising of 72 wt%(Al2O3) : 28 wt%(SiO2) based ceramics were fabricated using a colloidal processing route. The phase analysis of the ceramics was performed using an X-ray diffractometer (XRD) at room temperature confirming the presence of Al2O5Si and Al5.33Si0.67O9.33. The surface morphology of the fracture surface of the different sintered samples having different sizes of grain distribution. The resistive and capacitive properties of the three different sintered samples at frequency sweep (1 kHz to 1 MHz). The contribution of grain and the non-Debye relaxation process is seen for various sintered samples in the Nyquist plot. The ferroelectric loop of the various sintered sample shows a slim shape giving rise to low remnant polarization. The excitation performance of the sample at a constant electric signal has been examined utilizing a designed electrical circuit. The above result suggests that the prepared lead-free ceramic can act as a base for designing of dielectric capacitors or resonators.

Keywords:lead-free;dielectric;impedance;ferroelectric;filter

[References]

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[1] Kanka B, Schneider H, J. European Ceram. Soc., 20, 619 (2000)

[2] Fernandes L, Salomao R, Mater. Res., 21, e20170 (2018)

[3] Nath S, Dubey AK, Basu B, J. Biomater. Appl., 27, 67 (2012)

[4] Sato T, Shizuka M, Shimada M, Ceram. Int., 12, 61 (1986)

[5] Luthra KL, J. Am. Ceram. Soc., 71, 274 (1988)

[6] Sakka Y, Bidinger DD, Aksay IA, J. Am. Ceram. Soc., 78, 479 (1995)

[7] Hajra S, Sahu M, Purohit V, Mohanta K, Panigrahi BK, Deepti PL, Mater. Res. Express, 6, 126325 (2020)

[8] Paul BK, Haldar K, Roy D, Bagchi B, Bhattacharya A, Das S, J. Adv. Ceram., 3, 278 (2014)

[9] Kim YW, Kim HD, Park CB, J. Am. Ceram. Soc., 88(12), 3311 (2005)

[10] Zhang FC, Luo HH, Roberts SG, J. Mater. Sci., 42(16), 6798 (2007)

[11] Carvalho RS, da Silva VJ, da Nobrega RB, Lira HL, Santana LNL, Ceramica, 66, 56 (2020)

[12] Hajra S, Mohanta K, Sahu M, Purohit V, Choudhary RNP, Appl. Phys. A-Mater. Sci. Process., 125, 369 (2019)

[13] Ray A, Maji P, Roy A, Saha S, Sadhukhan P, Das S, Mater. Res. Express, 6, 4 (2019)

[14] Uniyal P, Yadav KL, Mater. Lett., 62, 2858 (2008)

[15] Kumar M, Yadav KL, J. Phys. Condens. Matter, 19, 242202 (2007)

[16] Hassena AB, Rhouma FIH, Daoudic M, Dhahri J, Zaidi M, Abdelmoula N, RSC Adv., 9, 19285 (2019)

[17] Arya BB, Choudhary RNP, Ceram. Int., 46, 4222 (2020)

[18] Yang H, Yan F, Zhang G, Lin Y, Wang F, J. Alloy. Compd., 720, 116 (2017)

[19] Deepti PL, Patri SK, Choudhary RNP, J. Mater. Sci.: Mater. Electron., 28, 024511 (2017)

[20] Dhak P, Dhak D, Das M, Pramanik K, Pramanik P, Mater. Sci. Eng. B-Solid State Mater. Adv. Technol., 164, 165 (2009)

[21] Dhak P, Dhak D, Das M, Pramanik P, J. Mater. Sci.: Mater. Electron., 22, 1750 (2011)

[22] Hajra S, Tripathy A, Panigrahi BK, Choudhary RNP, Mater. Res. Express, 6, 076304 (2019)

[23] Kumar A, Prasad VVB, Raju KCJ, James AR, J. Mater. Sci.: Mater. Electron., 26, 3757 (2015)