Molecular Crystals and Liquid Crystals, Vol.674, No.1, 11-18, 2018
Quantitative analysis of indium deposited layer formation mechanism for In/In4Se3 (100) nanosystem
Indium deposited coatings formation on (100) surface of In4Se3 layered semiconductor crystal was studied by scanning tunneling spectroscopy/microscopy (STS/STM) in UHV. STM/STS show on thermal activation-migration movement of the deposited metallic component over the studied area which acts as directed template for 1D nanostructures formation. The STM data were processed by means of roughness analysis. The frequency of occurrence of tunneling currents above a certain background level in STS data for the range of bias voltages corresponding to 0.67 eV In4Se3 band gap shows a linear dependence of the metal points' number of analysis on indium deposition time.