화학공학소재연구정보센터
Molecular Crystals and Liquid Crystals, Vol.676, No.1, 44-49, 2018
The effect of different annealing temperature on transparent conductive SnO2 thin film by solution process
In this work, SnO2 thin film was obtained with different annealing temperature by solution process. The result showed that transmittance in visible light region is related to the surface roughness, crystallinity, precursor impurity amount, and the presence of cracks and blisters. Annealing deposited films at a temperature below 300 degrees C, as temperature increases, remaining organic component decreases and transmittance increases while phase composition staying unchanged and without cracks and blisters. The substrate temperature has a positive effect on the sheet resistance of SnO2 thin film below 500 degrees C. SnO2 thin film with sheet resistance of 12.5k omega and average transmittance in visible light region of 97% was acquired at 300 degrees C.