화학공학소재연구정보센터
Journal of Materials Science, Vol.55, No.13, 5378-5389, 2020
A high growth rate process of ALD CeOx with amidinato-cerium [(N-Pr-i-AMD)(3)Ce] and O-3 as precursors
In this paper, a novel approach was studied to fabricate ALD CeOx films with amidinato-cerium (N-Pr-i-AMD)(3)Ce and O-3 as precursors. Ideal self-limiting deposition behaviors were found for the prepared films. The purity and surface morphology of the as-grown CeOx films, which possessed a high and constant growth rate of similar to 2.8 angstrom/cycle at 220-255 degrees C, were confirmed by XPS, XRD, SEM and AFM. The CeOx films could uniformly and conformally be deposited into deep and narrow trenches (high aspect ratio of 10:1), suggesting the good potential of this ALD process for complex 3D nanostructure-based applications. Furthermore, first-principles calculations based on density functional theory were performed to investigate possible interfacial reactions of this ALD process on the SiO2 surface.