화학공학소재연구정보센터
Journal of Materials Science, Vol.55, No.19, 8231-8240, 2020
Fabrication and optoelectronic properties of Ga2O3/Eu epitaxial films on nanoporous GaN distributed Bragg reflectors
Nanoporous GaN distributed Bragg reflectors (DBRs) with a high reflectivity (similar to 92%), which was fabricated via a doping selective electrochemical etching process, were used to deposit Eu-doped beta-Ga2O3 films by using pulsed layer deposition. Structural and chemical composition analyses indicated that the 900 degrees C-annealed film in air has the best crystalline quality and highest photoluminescence (PL) efficiency. The epitaxial relationship between the beta-Ga2O3: Eu film and DBR mirror was Ga2O3 (2 over bar ;GaN (0001) with Ga2O3 [010]& x2551;GaN [1 over bar21 over bar 0]. Compared to the Eu:Ga2O3 film on reference template, the 900 degrees C-annealed film on the DBR mirror presented a similar to 20-fold enhancement in the PL emission. The performance enhancement was attributed to light-coupling enhancement of the buried DBR mirror. Because of the good electrical properties of the annealed films, the fabricated DBR substrates pave the way for developing a range of rare-earth-doped Ga2O3 optoelectronic devices.