화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.140, No.12, 3615-3620, 1993
Suppression of Side-Etching in C2H6/H-2/O-2 Reactive Ion Etching for the Fabrication of an InGaAsP/InP P-Substrate Buried-Heterostructure Laser-Diode
A reactive ion etching (RIE) technique using a C2H6,H-2, and O-2 mixture was applied to the fabrication of InGaAsP/InP (P-substrate partially inverted buried heterostructure laser diodes, which have been commercially produced for their superior characteristics. The addition of O-2 suppressed side etching and made it possible to fabricate ridge mesa structures for the laser diodes with a height of 4 mu m and a width of 1 mu m with superior controllability. The effects O-2 addition were investigated by Auger electron spectroscopy and a mechanism suppressing side etching was examined. The characteristics including lifetime of the laser diodes fabricated by the RIE technique were as excellent as those of laser diodes fabricated by wet etching.